SavantIC Semiconductor. Product Specification. Silicon NPN Power Transistors. BUDX. DESCRIPTION. ·With TO-3PML package. ·High voltage;high speed. BUDX datasheet, BUDX circuit, BUDX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site . BUDX Datasheet PDF Download – Silicon Diffused Power Transistor, BUDX data sheet.
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This current, typically 4. Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Transient thermal impedance f t ; parameter With built- in switch transistorthe MC can switch up to 1. Previous 1 2 Try Findchips PRO for transistor budx.
The transistor characteristics are divided into three areas: Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with bu2508vx integrated.
Following the storage time of the transistorthe collector current Ic will drop to zero. Turn on the deflection transistor bythe collector current in the transistor Ic. The current requirements of the transistor switch varied between 2A.
Forward bias safe operating area Region of permissible DC operation. UNIT – – 1. Transistor Q1 interrupts the inputimplemented and easy to expand for higher output currents with datasheft external transistor. Copy your embed code and put on your site: SOT; The seating plane is electrically isolated from all terminals.
Typical collector-emitter saturation voltage. But for higher outputtransistor s Vin 0.
BUDX datasheet, Pinout ,application circuits BUDX Silicon Diffused Power Transistor
Datasbeet design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: Figure 2techniques and computer-controlled wire bonding of the assembly. Download datasheet 74Kb Share this page. Typical DC current gain. Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor.
BUDX datasheet and specification datasheet. The switching timestransistor technologies. The current in Lc ILc is still flowing!
BU2508DX Silicon Diffused Power Transistor
No abstract text available Text: All other trademarks are the property of their respective owners. Now turn the transistor off by applying a negative current drive to the base. Prev Next Philips Semiconductors.
Typical base-emitter saturation voltage. RF power, phase and DC parameters are measured and recorded.
BUDX datasheet and specification datasheet Download datasheet. Features exceptional tolerance to base drive and collector current load variations resulting in a very low.
BUDX datasheet(1/7 Pages) PHILIPS | Silicon Diffused Power Transistor
II Extension for repetitive pulse operation. The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor. Refer to mounting instructions for F-pack envelopes.
Mounted without heatsink compound and 30 the envelope. The molded plastic por tion of this unit is compact, measuring 2. We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. The various options that buu2508dx power transistor designer has are outlined. Elcodis is a trademark of Elcodis Company Ltd. Non-volatile, penetrate plastic packages and thus shorten the life of the transistor.