1N, datasheet for 1N – SILICON 3-LAYER BILATERAL TRIGGERS provided by New Jersey Semi-Conductor Products, Inc.. 1N pdf. 1NA,AA. Leakage Current. IBeth Direction!). (Applied Voltage • 14 Voml NJ Semi-Conductors encourages customers to verify that datasheets are . 1N Datasheet: Silicon 3-Layer Bilateral Triggers, 1N PDF Download New Jersey Semiconductor, 1N Datasheet PDF, Pinouts, Data Sheet.

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Other basic data is provided to enable the designer to have a wider field of choice — be it polarity, parameter, case style, process type, or complementary device types.

1N Datasheet PDF – New Jersey Semiconductor

They are particularly well-suited for new designs where a continuous, off-the-shelf supply of product is required. A special device number SCMxxxx is assigned to each individual pattern. Package Type Number Light! Typical applications include high-voltage differential and operational amplifiers, high- voltage inverters, low and medium current switching and series regulators.

BVco f, la I. NMOS Memory Probably nowhere else has semiconductor technology achieved greater complexities and higher circuit densities in practical, real-world products than in today’s advanced NMOS memories. The basic arrays with the addition of custom metalization.

Input loading of -0 25 mA maximum. These devices can also be used for Broadband Medium Power 0. R 1N 1N 1NB. For applications in instrumentation and pro- tective circuitry. Other high voltage and Darlington transistors are also available as specials. High Speed Static Static. Therefore it is necessary that each of the elements attached to the MPU bus require minimal load current.


Standard package, normally supplied by vendors; 2. To simplify the task in selecting a “best” transistor, diode or other device for new designs, this book’s selection tables include all popular Motorola semicon- ductor devices and applications. The McMOS dxtasheet is available in a wide variety datwsheet basic and complex logic functions at medium speeds and very low power dissipation.

While not family related.

1N5760 Datasheet PDF – New Jersey Semiconductor

High Input Impedance Comparators. Same as above, but with a different pin arrangement. Some of the more important features include: Gain control, decoupling, source and load impedances and load mismatch are treated and instructions for building a test fixture are also provided. These devices permit greater memory capacity per unit volume and lower costs per bit than imaginable only a lew years ago.

1N5760 Datasheet

I BQ 0. To obtain copies of these bulletins, simply list the EB number or numbers and send your request on your company letterhead to: Glass CassSI Rag.

The low power dissipation and flexible power supply requirements of this family of devices greatly simplify power supply design, and the high noise immunity and large fanout capability reduce parts count and simplify printed circuit board layout. This series is datssheet using beam lead sealed junction technology.

The two devices and their “variations” differ principally in pin configurations. Mn 41 Tel ! Evaluation Module This complete board has all of the M family dovices for ease of parts evaluation. With minimum gain-bandwidth products f, up to 1 00 MHz, these devices datasheett useful gain at high frequencies. For devices especially datasheey to consumer products, i. These FETs include devices developed for operation across the frequency range from dc to UHF in switching and amplifying applications.


Chain 1 – The following guide is designed to highlight those Motorola operational amplifiers which are recommended for new designs due to their excellent performance, lower relative cost and ready availability.

Use of special measurement equipment and voltage standards provide calibration directly traceable to the National Bureau of Standards. VolU MM Vc- 3. Darlington devices are not only a very datasneet gain alternative; other significant advantages include: The devices are listed according to increasing Current-Gain f T.

For other devices, such as transistors, other important characteristics or suggested applications are specified in their particular section. These devices are particularly useful in highly reliable systems using hybrid beam lead assembly techniques. High impedance diodes providing a constant current output over a wide range of applied voltages. The output mode is lower, requiring for more usable output leve probably the lator since it pproximately economy.

They allow interfacing systems of different logic levels, different grounds, etc. To locate the exact page number, see Catalog IndexiPage R 1N 1N 1N R IN 1N 1n55760 As an approximate rule of thumb, for each three memory packages in a typical system, one package of support interface circuitry is required.

Min Max uA Volts Cue 0. Butlar MC 1 Motorola offers the designer a choice of specifically designed integrated circuits for performing phase-locked datsaheet functions, such as, phase datzsheet, frequency division, filtering, and voltage controlled signal generation. MPF – Lowest cost.